A 0.4-V low noise amplifier using forward body bias technology for 5 GHz applicationWU, Dake; RU HUANG; WONG, Waisum et al.IEEE microwave and wireless components letters. 2007, Vol 17, Num 7, pp 543-545, issn 1531-1309, 3 p.Article

Benchmark tests on surface potential based charge-sheet modelsJIN HE; XING ZHANG; GANGGANG ZHANG et al.Solid-state electronics. 2006, Vol 50, Num 2, pp 263-267, issn 0038-1101, 5 p.Article

A control-gate-assisted erasing method for a single-poly EEPROM cell with metallic control gate structureDAKE WU; RU HUANG; WAISUM WONG et al.Semiconductor science and technology. 2009, Vol 24, Num 7, issn 0268-1242, 075012.1-075012.4Article

Scaling capability and design guidelines of a nano-scale quasi-SOI device for low operation power and high-performance applicationsYU TIAN; RU HUANG; XING ZHANG et al.Semiconductor science and technology. 2006, Vol 21, Num 4, pp 473-478, issn 0268-1242, 6 p.Article

A novel nanoscaled device concept: Quasi-SOI MOSFET to eliminate the potential weaknesses of UTB SOI MOSFETYU TIAN; RU HUANG; XING ZHANG et al.I.E.E.E. transactions on electron devices. 2005, Vol 52, Num 4, pp 561-568, issn 0018-9383, 8 p.Article

A spectral analysis method to directly determine minority carrier generation lifetime using the pulsed MOS structureMINGZHEN XU; CHANGHUA TAN; YANDONG HE et al.Solid-state electronics. 1994, Vol 37, Num 1, pp 31-36, issn 0038-1101Article

A refined forward gated-diode method for separating front channel hot-carrier-stress induced front and back gate interface and oxide traps in SOI nmosfetsJIN HE; XING ZHANG; RU HUANG et al.Semiconductor science and technology. 2002, Vol 17, Num 5, pp 487-492, issn 0268-1242Article

Equivalent doping profile transformation: a new analytical method to predict breakdown voltage of the composite p-n junctionJIN HE; YINGXUE LI; XING ZHANG et al.International journal of electronics. 2001, Vol 88, Num 10, pp 1067-1072, issn 0020-7217Article

Application of the difference subthreshold swing analysis to study generation interface trap in MOS structures due to Fowler-Nordheim agingCHANGHUA TAN; MINGZHEN XU; YANGYUAN WANG et al.IEEE electron device letters. 1994, Vol 15, Num 7, pp 257-259, issn 0741-3106Article

A new technique for determining the capture cross section of the oxide traps in MOS structuresMINGZHEN XU; CHANGHUA TAN; YANGYUAN WANG et al.IEEE electron device letters. 1991, Vol 12, Num 3, pp 122-124, issn 0741-3106, 3 p.Article

A new analytic method to design multiple floating field limiting rings of power devicesJIN HE; MANSUN CHAN; XING ZHANG et al.Solid-state electronics. 2006, Vol 50, Num 7-8, pp 1375-1381, issn 0038-1101, 7 p.Article

Comparison of device performance and scaling capability of thin-body GOI and SOI MOSFETsXIA AN; RU HUANG; XING ZHANG et al.Semiconductor science and technology. 2005, Vol 20, Num 10, pp 1034-1038, issn 0268-1242, 5 p.Article

Test structures and drie topography for bulk silicon MEMS devicesYONG RUAN; DACHENG ZHANG; XUEFENG HE et al.IEEE international reliability physics symposium. 2004, pp 631-632, isbn 0-7803-8315-X, 1Vol, 2 p.Conference Paper

A physics-based analytic solution to the MOSFET surface potential from accumulation to strong-inversion regionJIN HE; MANSUN CHAN; XING ZHANG et al.I.E.E.E. transactions on electron devices. 2006, Vol 53, Num 9, pp 2008-2016, issn 0018-9383, 9 p.Article

Comments on: Modeling MOSFET surface capacitance behavior under non-equilibriumJIN HE; XING ZHANG; YANGYUAN WANG et al.Solid-state electronics. 2006, Vol 50, Num 2, pp 259-262, issn 0038-1101, 4 p.Article

Scaling of lowered source/drain (LSD) and raised source/drain (RSD) ultra-thin body (UTB) SOI MOSFETsXIA AN; RU HUANG; XING ZHANG et al.Solid-state electronics. 2005, Vol 49, Num 3, pp 479-483, issn 0038-1101, 5 p.Article

An analytic model to account for quantum-mechanical effects of MOSFETs using a parabolic potential well approximationJIN HE; MANSUN CHAN; XING ZHANG et al.I.E.E.E. transactions on electron devices. 2006, Vol 53, Num 9, pp 2082-2090, issn 0018-9383, 9 p.Article

Simulation of the Bosch process with a string-cell hybrid methodRONGCHUN ZHOU; HAIXIA ZHANG; YILONG HAO et al.Journal of micromechanics and microengineering (Print). 2004, Vol 14, Num 7, pp 851-858, issn 0960-1317, 8 p.Article

A new analytical model for the surface field distribution and optimization of thin film SOI RESURF devicesJIN HE; XING ZHANG; YANGYUAN WANG et al.International journal of electronics. 2002, Vol 89, Num 2, pp 111-122, issn 0020-7217Article

Theoretical analysis of edge parasitic transistor effects in mesa-isolated fully-depleted SOI NMOS devicesHONGMEI WANG; XUEMEI XI; XING ZHANG et al.International journal of electronics. 1998, Vol 85, Num 1, pp 11-19, issn 0020-7217Article

Design guideline of an ultra-thin body SOI MOSFET for low-power and high-performance applicationsXIA AN; RU HUANG; BAOYING ZHAO et al.Semiconductor science and technology. 2004, Vol 19, Num 3, pp 347-350, issn 0268-1242, 4 p.Article

Design optimization of structural parameters in double gate MOSFETs for RF applicationsJIALE LIANG; HAN XIAO; RU HUANG et al.Semiconductor science and technology. 2008, Vol 23, Num 5, issn 0268-1242, 055019.1-055019.8Article

Investigation of Parasitic Effects and Design Optimization in Silicon Nanowire MOSFETs for RF ApplicationsJING ZHUGE; RUNSHENG WANG; RU HUANG et al.I.E.E.E. transactions on electron devices. 2008, Vol 55, Num 8, pp 2142-2147, issn 0018-9383, 6 p.Article

A continuous analytic I-V model for long-channel undoped ultra-thin-body silicon-on-insulator (UTB-SOI) MOSFETs from a carrier-based approachJIN HE; MANSUN CHAN; GANGGANG ZHANG et al.Semiconductor science and technology. 2006, Vol 21, Num 3, pp 261-266, issn 0268-1242, 6 p.Article

Resistive-Gate Field-Effect Transistor: A Novel Steep-Slope Device Based on a Metal-Insulator-Metal-Oxide Gate StackQIANQIAN HUANG; RU HUANG; YUE PAN et al.IEEE electron device letters. 2014, Vol 35, Num 8, pp 877-879, issn 0741-3106, 3 p.Article